2007. 3. 22 1/7 semiconductor technical data KMB5D5NP30Q n and p-ch trench mosfet revision no : 1 general description switching regulator and dc-dc converter applications. it s mainly suitable for power management in pc, portable equipment and battery powered systems. features n-channel : v dss =30v, i d =5.5a. : r ds(on) =40m (max.) @ v gs =10v : r ds(on) =50m (max.) @ v gs =4.5v p-channel : v dss =-30v, i d =-4.5a. : r ds(on) =55m (max.) @ v gs =-10v : r ds(on) =85m (max.) @ v gs =-4.5v super high dense cell design. reliable and rugged. maximum rating (ta=25 ) flp-8 (1) g h p t millimeters b2 g h l d a b1 dim p d l t 1.27 typ. 5.05+0.25/-0.20 3.90 0.3 + _ 0.42 0.1 + _ 0.15 0.1 + _ 6.00 0.4 + _ 1.4 0.2 + _ 0.20 0.05 + _ 0.5 0.2 + _ b2 b1 1 4 5 8 a 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 g1 s1 g1 d2 d2 d1 d1 s2 n-channel mosfet p-channel mosfet pin connection (top view) * : surface mounted on fr4 board, t 10sec. characteristic symbol n-ch p-ch unit drain-source voltage v dss 30 -30 v gate-source voltage v gss 20 20 v drain current dc i d * 5.5 -4.5 a pulsed (note1) i dp 23 -18 source-drain diode current i s 1.7 -1.7 a drain power dissipation p d * 2 w maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient r thja 62.5 /w
2007. 3. 22 2/7 KMB5D5NP30Q revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v n-ch 30 - - v i d =-250 a, v gs =0v p-ch -30 - - drain cut-off current i dss v ds =24v, v gs =0v n-ch - - 1 a v ds =-24v, v gs =0v p-ch - - -1 gate leakage current i gss v gs = 20v, v ds =0v n-ch - - 100 na p-ch - - 100 gate threshold voltage v th v ds =v gs, i d =250 a n-ch 0.8 - 1.8 v v ds =v gs, i d =-250 a p-ch -1.0 -1.5 -2.5 drain-source on resistance r ds(on) v gs =10v, i d =6a (note 1) n-ch - 28 40 m v gs =-10v, i d =-4.9a (note 1) p-ch - 45 55 v gs =4.5v, i d =5.2a (note 1) n-ch - 40 50 v gs =4.5v, i d =-3.6a (note 1) p-ch - 75 85 on state drain current i d(on) v gs =10v, v ds =5v n-ch 15 - - a v gs =-10v, v ds =-5v p-ch -12 - - forward transconductance g fs v ds =10v, i d =6a (note 1) n-ch 6 - - s v ds =-15v, i d =-4.9a (note 1) p-ch 4 - - source-drain diode forward voltage v sd i s =1.7a, v gs =0v (note 1) n-ch - 0.77 1.2 v i s =-1.7a, v gs =0v (note 1) p-ch - -0.82 -1.2 dynamic (note 2) total gate charge q g n-ch : v ds =10v, i d =6a, v gs =4.5v (fig.1) p-ch : v ds =-15v, i d =-4.9a, v gs =-10v (fig.3) n-ch - 9.3 - nc p-ch - 15.6 - gate-source charge q gs n-ch - 2.5 - p-ch - 2.4 - gate-drain charge q gd n-ch - 3.2 - p-ch - 3.3 - turn-on delay time t d(on) n-ch : v dd =10v, i d =1a, v gs =4.5v, r g =6 r l =10 (fig.2) p-ch : v dd =-15v, i d =-1a, v gs =-10v, r l =15 , r g =6 (fig.4) n-ch - 15.6 - ns p-ch - 13 - turn-on rise time t r n-ch - 9.7 - p-ch - 4.7 - turn-off delay time t d(off) n-ch - 26.3 - p-ch - 47.1 - turn-off fall time t f n-ch - 26.9 - p-ch - 17 - input capacitance c iss n-ch : v ds =8v, v gs =0v, f=1.0mhz p-ch : v ds =-15v, v gs =0v, f=1.0mhz n-ch - 510 - pf p-ch - 393 - output capacitance c oss n-ch - 155 - p-ch - 116 - reverse transfer capacitance c rss n-ch - 127 - p-ch - 45 - note 1) pulse test : pulse width 300 , duty cycle 2%. note 2) guaranteed by design. not subject to production testing.
2007. 3. 22 3/7 KMB5D5NP30Q revision no : 1 gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 0 2 2 4 6 8 10 4681012 5 15 0 10 25 20 1.0 1.5 03.0 0.5 2.5 2.0 i d - v gs i s - v sd drain current i d (a) drain current i d (a) r ds(on) - t j -75 -50 -25 25 50 75 125 100 0 reverse drain current i s (a) capacitance (pf) 1 10 20 0.8 1.4 1.2 0.6 1.0 0.4 source - drain voltage v sd (v) normalized threshold voltage v th v th - t j c - v ds -75 -50 -25 0.6 0.8 0.4 1.6 1.0 1.4 1.2 0.6 0.8 1.4 1.8 1.0 1.6 1.2 050100 25 10 150 125 75 4 6 02 8 12 normalized on resistance junction temperature tj ( ) c junction temperature tj ( ) c 0 200 1200 1000 600 800 400 v gs =10,9,8,7,6,5,4,3v v gs =1.5v c t a = 25 v gs = 10v i d = 4.5a c iss c rss 25 c -55 c 125 c n-channel v ds = v gs i ds = 250 a c oss
2007. 3. 22 4/7 KMB5D5NP30Q revision no : 1 gate - charge q g (nc) 0 5 3 1 2 4 14 8 6 12 0 16 4 10 2 q g - v gs gate - source voltage v gs (v) v d s = 10v i d = 6a gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) 0 0 -2 -5 -10 -15 -20 -25 -4 -6 -8 -10 -12 -4 -12 0 - 8 -20 -16 -1 -1.5 0-3 -0.5 -2.5 -2 i d - v gs i s - v sd drain current i d (a) drain current i d (a) reverse drain current i s (a) -1 -10 -20 -1 -2.5 -2.0 -0.5 -1.5 0.0 source - drain voltage v sd (v) normalized threshold voltage v th v th - t j -75 -50 -25 0.6 0.9 0.3 1.09 1.00 1.06 1.03 050100 25 150 125 75 junction temperature tj ( ) c v gs =-1.5v v gs =-10,-9,-8,-7,-6,-5,-4,-3v v ds = v gs i ds = 250 a 25 c -55 c 125 c p-channel
2007. 3. 22 5/7 KMB5D5NP30Q revision no : 1 drain - source voltage v ds (v) r ds(on) - t j -75 -50 -25 50 125 100 25 75 0 capacitance (pf) c - v ds 0.6 0.8 1.4 1.8 1.0 1.6 1.2 -25 -10 -15 0 -5 -20 -30 normalized on resistance junction temperature tj ( ) c 0 200 600 500 100 300 400 v gs = -10v i d = -4.9a c oss c iss c rss gate - charge q g (nc) 0 -10 -6 -2 -4 -8 14 8 6 12 0 16 4 10 2 q g - v gs gate - source voltage v gs (v) v d = -30v i d = -3a square wave pulse duration (sec) 10 1 10 2 10 -3 10 -2 10 -1 1 10 -4 r th 10 -2 10 -1 1 2 1. r thja(t) = r(t) *r thja 2. r thja = see data sheet 3. t jm -t a =p dm *r thja(t) 4. duty cycle, d=t1/t2 t 1 t 2 p dm single pluse 0.02 0.1 0.2 0.5 0.05 normalized transient thermal resistance
2007. 3. 22 6/7 KMB5D5NP30Q revision no : 1 fig. 1 gate charge v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig. 2 resistive load switching v gs v ds v ds v gs 1.0 ma schottky diode 10 v 6 ? r l 0.5 v dss 0.5 v dss
2007. 3. 22 7/7 KMB5D5NP30Q revision no : 1 fig. 3 gate charge v gs - 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig. 4 resistive load switching v gs v ds v ds v gs 1.0 ma schottky diode -10 v 6 ? r l 0.5 v dss 0.5 v dss
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